Cell Phone To Displace Digital Camera |
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Thursday, 08 February 2007 |
A study by the optical component specialists Schneider Kreuznach confirms the potential of cell phone photography. However, image quality requires optimization through the addition of higher-resolution sensors and more powerful lens systems. The photography sector is facing another upheaval: Toward the end of the 1990s, digital cameras started replacing analog models. Now there is a new trend to replace digital cameras with cell phones with camera capabilities. A representative study carried out by optical component specialists Schneider Kreuznach confirms the potential of cell phone photography. Around 1000 users in Germany, China, India, and the U.S.A. were interviewed about their specific usage patterns relating to picture-taking with digital cameras and cell phones....more  (0) Comments |
Intel And IBM Commit To High-k Metal Gates |
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Wednesday, 31 January 2007 |
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In a surprise announcement described as the “biggest change to computer chips in 40 years,” Intel said it has committed to putting hafnium-based high-k gate dielectrics and metal gate electrodes into production for the 45 nm generation. Intel’s announcement was quickly followed by a similar one from IBM. The two advantages of a high-k gate material over the silicon dielectric and silicon oxynitrides now used are reduced gate leakage and increased drive current. It also enables future scaling, since conventional dielectrics are already critically thin, measuring only ~5 atoms thick. It’s estimated that almost half of such a chip’s power consumption is due to current leakage through this thin dielectric....more (0) Comments |
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Researchers Tip Molecular Memory Breakthrough Using Nanowires |
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Tuesday, 30 January 2007 |
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A team of UCLA and California Institute of Technology chemists reported in the Jan. 25 issue of the journal Nature the successful demonstration of a large-scale, "ultra-dense" memory device that stores information using reconfigurable molecular switches. This research represents an important step toward the creation of molecular computers that are much smaller and could be more powerful than today's silicon-based computers. The 160-kilobit memory device uses interlocked molecules manufactured in the UCLA laboratory of J. Fraser Stoddart, director of the California NanoSystems Institute (CNSI), who holds UCLA's Fred Kavli Chair in Nanosystems Sciences....more (0) Comments |
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Intel Shows Off 45nm Progress Thanks To High-K Metal Gate Transistors |
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Monday, 29 January 2007 |
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When things are going good companies like to brag and tout their stuff and that is exactly what Intel is doing. With the embargo lifted on Intel's new "High-k + Metal Gate Transistor Breakthrough" we can now talk about how Intel is now able to ramp up 45nm production for processors that will be coming out later this year on the mobile, desktop and server families....more (0) Comments |
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Comparing DAC Architectures |
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Wednesday, 24 January 2007 |
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Entry-level engineers know ADC topologies so well that during interviews, most job seekers can draw and explain fundamental block diagrams. The same situation does not hold true for DAC topologies. In this case, applicants can tell me only the basics: Digital goes in, and analog comes out....more (0) Comments |
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The Outlook For DRAMs In Consumer Electronics |
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Tuesday, 23 January 2007 |
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The dramatic growth in consumer electronics has generated an increasing need for economical off-chip data storage. These applications include flat panel TVs, PVRs, set top boxes, printers, hard disk drives, PDAs, camcorders and even digital still cameras and the proliferation of broadband Internet access and its supporting products, both in the home and at the ISP....more (0) Comments |
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