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Components / Sensors
Aachen Researchers Develop Carbon Transistor |
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Monday, 19 February 2007 |
A research group under Max Lemme at Gesellschaft Angewandte Mikro- und Optoelektronik mbH (AMO) has produced top-gated field effect transistors in a monolayer of the graphene allotrope of carbon. Compared to conventional silicon and silicon-on-insulator MOSFETs the researchers have realized a "significant enhancement of electron and hole mobility," the AMO said in a statement. AMO did not reveal quantitative details of the carbon transistor in its statement but said that the first experimental details would be published in the IEEE Electron Device Letters in April 2007 in paper titled "A graphene field effect device." A conventional CMOS-compatible process has been applied to fabricate a graphene field-effect device "Furthermore, a second transistor gate was placed on top of the graphene film for the first time, AMO said....more  (0) Comments |
Can Software Catch Up To ICs? |
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Monday, 19 February 2007 |
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In terms of available floating-point operations per second on processors and systems, Moore's Law hasn't yet reached its limits. But in terms of usable performance by most software--even advanced technical computing software--perhaps it already has. A look at the Top500 Supercomputer Sites List (www.top500.org) shows that a large portion of the technical computing workload has moved to commodity Linux clusters: commodity servers, commodity networks and commodity storage. At the same time, novel multicore processor architectures, such as the Cell Broadband Engine (Cell BE), show the potential for substantial computing power (hundreds of gigaflops) to reside in entry-level servers, with, say, two to four processors....more (0) Comments |
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Renesas And Matsushita Develop Technique For Stabilizing On-Chip 45-nm SRAM |
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Friday, 16 February 2007 |
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Renesas Technology and Matsushita Electric Industrial announced the development of a technique that achieves stable operation with 45-nm (nanometer) process generation bulk CMOS for SRAM (Static Random Access Memory) that can be embedded in SoC (system-on-a-chip) devices and microprocessors (MPUs). Tests of experimental chip with 512-Kbit SRAMs employing this technique have confirmed stable operation over a wide temperature range (-40˚C to 125˚C) and a larger operating voltage range margin with respect to process variations. The experimental SRAM chip, produced using a 45-nm CMOS process, incorporated two different memory cell designs, one with a cell area of both 0.327 µm2 and another with a cell area of only 0.245 µm2 — the world’s smallest level. The smaller memory cell was achieved with a reduced processing dimension margin....more (0) Comments |
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Lexus LS 460 Parking System Grabs The Wheel |
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Friday, 16 February 2007 |
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New sensor-based systems enable vehicles to steer themselves into parking spaces. Last fall, when Lexus announced it was marketing a North American vehicle with a self-parking feature, consumers were caught by surprise. From an industry dominated by talk of hands-free phones, iPod plug-ins, and gasoline prices, the idea of a self-parking car seemed unexpected, even foreign. The collective consumer reaction seemed to be, you mean it’s going to turn the steering wheel…by itself? Indeed it is. Lexus’ intelligent LS 460 performs all the mental calculations of a human driver, “talks” with engine, transmission, and steering sensors, “listens” to signals from sonar devices mounted on the front bumper, then grabs hold of the wheel and steers the vehicle into a parking spot....more (0) Comments |
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IBM Unveils World's Fastest On-Chip Dynamic Memory Technology |
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Thursday, 15 February 2007 |
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In papers presented at the International Solid State Circuits Conference (ISSCC), IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (embedded dynamic random access memory). This new technology, designed using IBM’s Silicon-on-Insulator (SOI) for high-performance at low power, vastly improves microprocessor performance in multi-core designs and speeds the movement of graphics in gaming, networking, and other image intensive, multi-media applications. The technology is expected to be a key feature of IBM’s 45nm (nanometer) microprocessor roadmap and will become available beginning in 2008. IBM’s new eDRAM technology, designed in stress-enabled 65nm SOI using deep trench, dramatically improves on-processor memory performance in about one-third the space with one-fifth the standby power of conventional SRAM (static random access memory)....more (0) Comments |
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Thermal Design Considerations For High-Power LED Systems |
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Wednesday, 14 February 2007 |
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LEDs are more efficient than incandescent sources, and have very different thermal challenges. Unlike incandescent tungsten-filament light bulbs, high-power LEDs do not radiate heat. Instead, LEDs conduct heat from their PN junction to the thermal slug on the LED package. Because the heat generated by LEDs is conducted, the heat has a longer, more expensive, path to the atmosphere. In an LED, the heat path includes the thermal impedances from the junction to the slug, the slug to the board, the board to the heatsink, and the heatsink to the atmosphere. The heat path for a tungsten bulb is almost straight into the atmosphere, starting with the thermal resistance from the filament to the glass and ending with the thermal resistance from the glass to the atmosphere....more (0) Comments |
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