2931-150R3 DatasheetEdited by (
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Description:
The 2931-150 is an internally matched, COMMON BASE bipolar transistor capable of providing 150 Watts of pulsed RF output power at 50μs pulse width,
4% duty factor across the 2900 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetic ceramic sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.
(Absolute) Maximum Ratings:
Maximum Power Dissipation
Device Dissipation @ 25°C1 ................................ 500 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) ..........................65 V
Emitter to Base Voltage (BVebo) ........................... 3.0 V
Collector Current (Ic) ........................................... 15.0 A
Maximum Temperatures
Storage Temperature ........................................... -65 to +200 °C
Operating Junction Temperature +200 °C
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