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   Diodes, Schottky

The Schottky diode (named after German physicist Walter H. Schottky) is a semiconductor diode with a low forward voltage drop and a very fast switching action. Typical applications include discharge-protection for solar cells connected to lead-acid batteries and in switch mode power supplies; in both cases the low forward voltage leads to increased efficiency. While standard silicon diodes have a forward voltage drop of about 0.6 volts, Schottky diodes voltage drop at forward biases of around 1 mA is in the range 0.15V to 0.45 V, which makes them useful in voltage clamping applications and prevention of transistor saturation. This is due to the higher current density in the Schottky diode.

A Schottky diode uses a metal-semiconductor junction as a Schottky barrier (instead of a semiconductor-semiconductor junction as in conventional diodes). This Schottky barrier results in both very fast switching times and low forward voltage drop.

It is often said that the Schottky diode is a "majority carrier" semiconductor device. This means that if the semiconductor body is doped N-type, only the N-type carriers (mobile electrons) play a significant role in normal operation of the device. No slow, random recombination of N- and P- type carriers is involved, so this diode can cease conduction faster than an ordinary PN rectifier diode. This property in turn allows a smaller device area, which also makes for a faster transition. This is another reason why Schottky diodes are useful in switch-mode power converters; the high speed of the diode means that the circuit can operate at frequencies in the range 200 kHz to 2 MHz, allowing the use of small inductors and capacitors with greater efficiency than would be possible with other diode types. Small-area Schottky diodes are the heart of RF detectors and mixers, which often operate up to 5 GHz.

The most evident limitations of Schottky diodes are the relatively low reverse voltage rating, 50 V and below, and a relatively high reverse current. The reverse leakage current, increasing with temperature, leads to a thermal instability issue. This often limits the useful reverse voltage to well below the actual rating.

Schottky diodes can be used in power supply "ORing" circuits in products that have both an internal battery and a mains adaptor input, or similar. But the high reverse leakage current presents a problem in this case, as any high-impedence voltage sensing circuit (e.g. monitoring the battery voltage or detecting whether a mains adaptor is present) will see the voltage from the other power source through the diode leakage.

Commonly encountered Schottky diodes include the 1N5817 series 1 A rectifiers. Schottky metal-semiconductor junctions are featured in the successors to the 7400 TTL family of logic devices, the 74S, 74LS and 74ALS series, where they are employed as clamps in parallel with the collector-base junctions of the bipolar transistors to prevent their saturation, thereby greatly reducing their turn-off delays. (ALS stands for Advanced Low-power Schottky.)

When an even lower forward voltage is desired, or if the reverse-leakage is problematic, a so-called "ideal diode" such as the Linear Technology LTC4413 can be used. This is an integrated circuit combining a MOSFET switch and a control circuit.



Bronze Partners
Advanced Power Technology
Advanced Semiconductor, Inc.
Aeroflex Metelics
Agilent Technologies
Allegro MicroSystems Inc.
AUK Corporation
Austin Semiconductor, Inc.
Bourns, Inc.
C-S Electronic Sales, Inc.
California Micro Devices, Corp.
Central Semiconductor Corp.
Comchip Technology
Components North Inc.
Contex Ltd
Continental Device India Limited
Cougar Electronics Corp.
Crownpo Technology Inc.
Daco Semiconductor Co Ltd
Diodes Inc
Diotec Electronics Corporation
Diotec Semiconductor
EDAL Industries, Inc.
EIC Semiconductor Inc.
Elcom Systems, Inc.
Electronic Devices, Inc.
eupec Inc.
Fagor Electronic Components, Inc.
Fairchild Semiconductor
FCI Semiconductor
Freescale Semiconductor, Inc.
Fuji Electric Corp. of America
Fuji Semiconductor, Inc
Goodark Electronics
Hi-Sincerity Microelectronics
High Voltage Power Solutions, Inc
Infineon Technologies Corporation
International Components Corp.
International Rectifier Corp.
IXYS Corporation
Jaro Components, Inc.
Khandelwal Herrmann Electronics Ltd
KOA Speer Electronics, Inc.
Laube Technology
Linear Integrated Systems
M/A-COM Tyco Electronics
MicroMetrics, Inc.
Microphase Corporation
Microsemi Corp
Microsemi Corp.
Microsemi Corporation
Microwave Device Technology
Mospec Semiconductor Corp.
New Jersey Semi-Conductor Products
Nihon Inter Electronics Corporation (NIEC)
NTE Electronics, Inc.
ON Semiconductor
Peter Parts Electronics
Philips ECG
Philips Semiconductors
RFE International, Inc.
ROHM Electronics USA, LLC
Rsm Sensitron Semiconductor
SanRex Corporation
Semiconductor Liquidation Services
Semiconwell
Shindengen America Inc
Skyworks Solutions, Inc
Solid State Devices, Inc.
Solitron Devices Inc
STMicroelectronics, Inc.
Surge Components Inc.
Taiwan Semiconductor
Toshiba America Electronic Components, Inc.
United Monolithic Semiconductors
Ventronics, Inc.
Vishay Intertechnology
Zetex, Inc.
Fix & Prog. Sinewave Oscillators - Frequency Devices

 

Books
Cree APT Agree on Schottky Diode Die.: An article from: High Tech Ceramics News

Microsemi Introduces 600V Schottky Diodes.: An article from: High Tech Ceramics News

MICROSEMI DEBUTS 600V SCHOTTKY DIODE POWERMITE PACKAGE.: An article from: Electro Manufacturing

Light-Emitting Diodes
E. Fred Schubert

Excerpt - page 2: "... first observation of electrolumines- cence from a SiC (carborundurn) light-emitting diode. The article indi- cates that the first LED was a Schottky diode rather than a p-n junc- tion diode (after H. ..."
See more references to Diodes, Schottky in this book.
Electrical properties of thin nanocrystalline diamond-based Schottky barrier diodes and other two terminal structures
Mitchell Douglas Parr

The Physics and Applications of Resonant Tunnelling Diodes (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering)
Hiroshi Mizuta and Tomonori Tanoue

Excerpt - page 140: "... The principle of operation is similar to that of the Schottky diode multiplier: a large amplitude sinusoidal voltage signal is applied to ..."
See more references to Diodes, Schottky in this book.
Microwave and Millimeter-Wave Diode Frequency Multipliers (Artech House Microwave Library)
Marek T. Faber, Jerzy Chramiec, and Miroslaw E. Adamski

Excerpt - page 24: "... systematic review and classification of recently developed promising devices. 3.1 SCHOTTKY-BARRIER DIODES The Schottky-barrier diode is a two-terminal semiconductor device that utilizes ..."
See more references to Diodes, Schottky in this book.
SiC-based Schottky diode gas sensors (SuDoc NAS 1.15:113159)
NASA

Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes (SuDoc NAS 1.15:209648)
NASA

Radiation effects on gallium arsenide devices and Schottky diodes (Technical report EE) (Technical report EE)
Robert Harold Schnurr

Laterally stacked Schottky diodes for infrared sensor applications patent application (SuDoc NAS 1.71:NPO-17426-1-CU)
NASA

Defect levels in neutron-irradiated GaAs Schottky diodes and laser diode degradation (AFCRL-TR) (AFCRL-TR)
Jacques E Ludman

Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors (SuDoc NAS 1.15:107255)
NASA

A Schottky diode bridge sampling gate (NBS technical note) (NBS technical note)
Arnold G Perrey

Planar monolithic schottky varactor diode millimeter-wave frequency multipliers
Richard Bradley

Reliability evaluation of Schottky barrier diode microcircuits (ADA 032 001) (ADA 032 001)
E. T Lewis

An improved Schottky photovoltic diode for solar energy conversion
Wayne A Anderson

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications final progress report April 15, 1989 - December 31, 1989 (SuDoc NAS 1.26:186831)
NASA

Study of N Plasma Damage of GaAs Schottky Diode in Inductively Coupled Plasma System
E Toussaint

Study of ICP NH Plasma Damage on GaAs Schottky Diode
L. C Meyer

Surface and interface study of PdCr/SiC schottky diode gas sensor annealed at 425C (SuDoc NAS 1.15:107429)
NASA

A cooled K-band mixer using Schottky barrier diodes (Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Thesis. 1975 M.S) (Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Scienc
Charles Edgar Simmons

Differential capacitance-voltage profiling of schottky barrier diodes for measuring implanted depth distributions in silicon (NBS special publication)
Robert G Wilson

Radiation effects on gallium arsenide phosphide and gallium phosphide Schottky barrier diodes (Technical report / Bureau of Engineering Research, University of New Mexico) (Technical report / Bureau of Engineering Research, University of New Mexico)
Donald A Neamen

Semiconductor Databook 1985 (Thyristors, Rectifiers, Schottkys, Molded Power Products and Diode Bridges, Semiconductor Fuses, Mil-Qualified Products, Assemblies & others)
International Rectifier

Electronic Properties of Semiconductor Interfaces (Springer Series in Surface Sciences)
Winfried Monch and Winfried Mvnch

Excerpt - page 27: "... +(Gt~n -W )=eoV," +kgT+(Wn - W- ) (2.23) of the diode. Schottky [1942] applied his model to both selenium and copper oxide ..."
See more references to Diodes, Schottky in this book.
Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes (Semiconductor measurement technology) (Semiconductor measurement technology)
James M Kenney

Theoretical background for thermionic conversion including space-charge theory, Schottky theory, and the isothermal diode sheath theory (NASA technical note) (NASA technical note)
Wayne B Nottingham

Semiconductor measurement technology: Permanent damage effects of nuclear radiation on the X-band performance of silicon Schottky-barrier microwave mixer diodes (NBS special publication ; 400-7)
James M Kenney

Metal--Semiconductor Schottky Barrier Functions and Their Applications
B.L. Sharma

Zero bias Schottky barrier detector with input DC block. (buyers guide): An article from: Microwave Journal

Organic Light-Emitting Diodes (Optical Engineering)
Jan Kalinowski

Physics of Organic Semiconductors
Wolfgang Brütting

Excerpt - page 334: "... between zero and 1 eV. In the context of Si Schottky diodes it has been suggested [44, 45] that the barrier height ..."
See more references to Diodes, Schottky in this book.
Semiconductor Device Physics and Simulation (Microdevices)
J.S. Yuan and Juin Jei Liou

Excerpt - page 45: "... 2.6. HETEROJUNCTION 45 2.5. SCHOTTKY DIODES The Schottky diode is electrically similar to an abrupt one-side p+-n junction, ..."
See more references to Diodes, Schottky in this book.
Introduction to Solid-State Lighting
Arturas Zukauskas, Michael S. Shur, and Remis Gaska

Excerpt - page 111: "... (1988, 1990) have demonstrated enhancement of emission from metal-surface-patterned Ag/GaAs Schottky diodes and AlGaAs/GaAs LEDs via coupling to surface plasmons. Since the ..."
See more references to Diodes, Schottky in this book.
Halbleiter-Schaltungstechnik
Ulrich Tietze, C. Schenk, and E. Gamm

Excerpt - page 1: "... - - - - P EiT1I: K K K Schaltzeichen pn-Diode Schottky-Diode Abb. 1.1. Schaltzeichen und Autoau einer Diode ..."
See more references to Diodes, Schottky in this book.
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SOC Central
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