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A high peak power solid-state source for low duty cycle applications. (use of IMPATT /Impact Ionization Avalanche Transit Time~ diodes in high power microwave ... An article from: Microwave Journal
Bernard E. Sigmon
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Microwave Engineering
David M. Pozar
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| Excerpt - page 521: "... performance at lower frequencies. More details on these and related diode devices can be found in the references. IMPATTdiodes. An IMPATT (Impact Avalanche and Transit Time) diode has a physical structure similar to a PIN diode, ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Semiconductor Devices: Physics and Technology, 2nd Edition
Simon M. Sze
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| Excerpt - page 261: "... 261 8.3 IMPATT DIODE The name 11 l'ATT stands for impact ionization avalanche transit-time. IMPATT diodes employ impact ionization and transit-time properties of' semiconductor devices to ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
Sorab K. Ghandhi
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| Excerpt - page 8: "... the upper operating voltage of semiconductor devices. Devices such as Impact Avalanche Transit Time (IMPATT) diodes, which are important microwave power sources, are designed to operate ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Telecommunication Circuits and Technology
Andrew Leven
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| Excerpt - page 356: "... Solid-state devices Two devices which overcome the major problem of transit time are the Gunn diode and the impact avalanche and transit time (IMPATT) diode. Both these devices use a negative resistance characteristic, i.e. ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Electronic Technology Handbook
Neil Sclater
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| Excerpt - page 135: "... 50 GHz. It is also called a transferred-electron oscillator (TEO). IMPATT DIODES An IMPATT (impact avalanche transit time) diode exhibits negative resistance characteris- tics which result from a ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Microwaves Made Simple: Principles and Applications (Artech House Microwave Library (Paperback))
W. Stephen Cheung and Frederic H. Levien
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| Excerpt - page 155: "... solid-state devices are reviewed first. Microwave devices such as Gunn diodes, IMPATT (impact avalanche transit time) diodes, tunnel diodes, and varactor diodes are then discussed. This ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Gallium Arsenide : Key Papers in Physics, No1 (Key Papers in Applied Physics)
J BLAKEMORE
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| Excerpt - page 51: "... to 500 kV/cm. Electric fields that large are important for avalanche breakdown, as encountered in a reverse-biased P-Njunction, and as so utilized in avalanche photodiodes384 and in impact- avalanche transit time (IMPATT) diodes.385 Since the ioni- zation coefficient of electrons in GaAs for ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Cumulative Subject Index Volumes 1-32 (Experimental Methods in the Physical Sciences)
Marc de Graef
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| Excerpt - page 148: "... Immersion spectrophotometry. 11, 67(1-671 Immunoassay. laser light scattering. 20, 319 Impact avalanche and transit time (IMPATT) diodes, 2A, 47, 67 mode, 26, 275-279 Impact collision ISS (IC'ISS). ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Microwave Remote Sensing: Active and Passive, Volume I: Fundamentals and Radiometry
Fawwaz T. Ulaby
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| Excerpt - Back Matter: "... high frequency IF intermediate frequency IFOV instantaneous field of view IMPATT impact avalanche and transit time (diode) ITU International Telecommunication Union JPL Jet Propulsion Laboratory ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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RF and Microwave Semiconductor Device Handbook
Mike Golio
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| Excerpt - page 31: "... for a semiconductor that demonstrates the transferred electron effect. 3.3.3 IMPATT Diodes 3-7 IMPATT (IMPact Avalanche Transit Time) diodes [31 are fabricated from pn or Schottky junctions. The ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Physical Properties of Materials for Engineers
Daniel D. Pollock
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| Excerpt - page 483: "... js = j106 In other words, the Schottky diode saturation current density is about 106 times larger than that of an ... electrons are very short. 11.10.6.4 IMPATT Diodes An IMPATT diode (IMPact, Avalanche, Transit-Time diode) consists of a DC, reverse- bias, p-n junction in ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Applications of High-Power Microwaves (Artech House Antennas and Propagation Library)
A. V. Gaponov-Grekhov and Victor L. Granatstein
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| Excerpt - page 5: "... silicon bipolar junction transistors, MESFET = metal semiconductor field-effect transistors, IMPATT = impact ionization avalanche transit time diodes, GUNN = Gunn diodes (also called transferred electron devices). (Figure ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Handbook of Microwave Technology: Components and Devices (Handbook of Microwave Technology)
T. Koryu Ishii
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| Excerpt - page 280: "... design, the model parameters are usually evaluated by fitting the diode measured RF S-parameter data to ... a network analyzer. 5. Microwave IMPATT Diodes Introduction A microwave impact-ionization avalanche transit time (IMPATT) diode is a semiconductor diode that operates with a ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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The Materials Science of Microelectronics
K. J. Bachmann
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| Excerpt - page 181: "... discrete microwave devices are the transferred electron devices (TEDs), the impact avalanche transit time (IMPATT) diode, the trapped plasma avalanche triggered transit (TRAPATT) diode, the barrier ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Microwave Devices, Circuits and Their Interaction (Wiley Series in Microwave and Optical Engineering)
Charles A. Lee and G. Conrad Dalman
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| Excerpt - page 180: "... at microwave and millimeter wavelengths with moderate efficiency is the IMPATT (impact avalanche transit time) diode. This diode is essentially an outgrowth of a proposal made ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Physics of Semiconductor Devices Iwpsd-2003
International Workshop on the Physics of, K. N. Bhat, and A. Dasgupta
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| Excerpt - page 188: "... noise properties of the IMPATT diode are optimized. Further, the diode exhibits superior microwave properties over the GaAs homojunction IMPATT diode for that value of heterostructure layer width. 1. INTRODUCTION IMPact Avalanche Transit Time (IMPATT) diode is regarded as a premier source of microwave ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Essential Analog Electronics
Owen Bishop
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| Excerpt - page 197: "... they are less mobile and the current is reduced. Gunn diodes are primarily used in microwave ... sensors, and related fields. The impact avalanche and transit time (IMPATT) diode is another negative resistance device but this is a ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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TV & Video Engineer's Reference Book
BORIS TOWNSEND and Kenneth Jackson
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| Excerpt - page 52: "... Gunn diodes, however, they operate in a reverse-current mode. Three-layer IMPATT (IMPact Avalanche Transit Time) diodes are biased so that the p'-n junction operates in the ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Recombination in Semiconductors
Peter T. Landsberg
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| Excerpt - page 221: "... important as limiting the performance of semiconductor lasers [3.1.6], light-emitting diodes [3.1.7], and solar cells [3.1.8], ... Being the inverse process to impact ionization (section 2.1.1) avalanche devices (the photodiode, the impact avalanche transit time (IMPATT) diode, and hot electron devices) also utilize this type of ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Microstrip Circuits (Wiley Series in Microwave and Optical Engineering)
Fred Gardiol
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| Excerpt - page 169: "... patch resonator (Section 7.1) is shown in Figure 9.14. 9.5.3 IMPATT Diode Oscillators A pn diode biased in the avalanche range with a drift region ... (Section 9.1.9). Introducing an IMPATT (impact avalanche transit-time) diode within a resonant structure Resonator 4425ezzo Solid-State Generator FIGURE ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Microwave Communications Engineering Volume 1 Microwave Devices, Circuits and Subsystems
Ian A. Glover, Steve Pennock, and Peter Shepherd
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| Excerpt - page 59: "... oscillating configuration is shown in Figure 2.47, in which the diode load is composed of a ... CT + Cd C 2.8 IMPATT Diodes IMPATT (Impact Avalanche and Transit Time) diodes are very powerful microwave sources, providing the highest (solid ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Principles of Optical Circuit Engineering (Optical Engineering)
Mark Mentzer
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| Excerpt - page 142: "... carriers due to the illumination. Optical Control of Active Devices IMPATT Oscillators One type of active ... PATT oscillator. IMPATT stands for IMPact Ionization Avalanche Transit Time. The IMPATT diode uses impact ionization to generate free carriers which then travel ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Semiconductor Glossary: An Introduction to Semiconductor Terminology
Jerzy Ruzyllo
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| Excerpt - page 73: "... energy species with an atom in a lattice. electron-hole pair IMPATT diode Impact Ionization Avalanche Transit-Time; GaAs based high-performance microwave transit-time diode. transit - time diodes ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Strained Silicon Heterostructures: Materials and Devices (Iee Circuits, Devices and Systems Series, 12)
N. B. Chakrabarti, S. K. Ray, and C. K. Maiti
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| Excerpt - page 1: "... III- V semiconductor developed for device use was GaAs. GaAs diodes found applications as varactors, Gunn diodes and impact ionization avalanche transit time diodes (IMPATTs). The GaAs metal semiconductor field effect transistor (MESFET) was the ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Radio Engineering for Wireless Communication and Sensor Applications (Artech House Mobile Communications Series)
Antti V. Raisanen and Arto Lehto
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| Excerpt - page 176: "... a device with negative resistance is needed. Besides the tunnel diode, a Gunn diode and an impact ionization avalanche transit time (IMPATT) diode have a negative resistance region in their I-Vcharacteristics. The ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Handbook of Radio and Wireless Technology
Stan Gibilisco
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| Excerpt - page 77: "... purposes, but voltage regulation of some sort is essential. An IMPATT diode is a microwave oscillating device like a Gunn diode. The acronym IMPATT comes from the words "impact avalanche transit time." An IMPATT diode can be used as an amplifier for ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Photonic Aspects of Modern Radar (Artech House Radar Library)
Henry Zmuda and Edward N. Toughlian
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| Excerpt - page 264: "... pairs directly inside a microwave metal semiconductor FET (MESFET) or impact ionization avalanche transit time (IMPATT) diode in order to synchronize the device or to modify its ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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GaN and Related Materials II (Optoelectronic Properties of Semiconductors and Superlattices)
Stephen J. Pearton
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| Excerpt - page 348: "... On the other hand, in other device structures, such as avalanche photodiodes, APDs, and impact ionization avalanche transit time, IMPATT, diodes, avalanche multiplication provides a useful gain mechanism which boosts the ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Process Technology for SIC Devices (EMIS Processing Series, 2) (Emis Processing Series, 2)
Carl-Mikael Zetterling
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| Excerpt - page 148: "... the filters and matching circuit [221. P + n n+ Impact ionisation avalanche transit-time (IMPATT) diodes n- X are, unlike high-voltage diodes, designed for and used ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Doping in III-V Semiconductors (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering)
E. F. Schubert
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| Excerpt - page 470: "... of mixer diodes and other applications. Furthermore, the planar barrier diode allows one to `tailor' the ... of the two intrinsic regions. IMPATT or impact avalanche transit time diodes are active devices used for microwave generation in the ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Radio-Frequency and Microwave Communications Circuits: Analysis and Design
Devendra K. Misra and Devendra Misra
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| Excerpt - page 489: "... resolution even below 1 kHz while keeping the overall response time short by using additional loops. ... OSCILLATORS Properly biased Gunn and IMPATT (impact ionization avalanche transit time) diodes exhibit negative resistance characteristics that can be utilized in conjunction ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors
Eckehard Schöll
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| Excerpt - page 62: "... semiconductor devices that are used as microwave oscillators (the Gunn diode, resonant-tunneling diode, real-space transfer device, and impact-ionization avalanche transit time (IMPATT) diode) or electronic Figure 2.9. The hierarchy Reaction-diffusion equations wZ(r, ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Encyclopedia of Telecommunications (Froehlich/Kent Encyclopedia of Telecommunications)
Fritz E. Froehlich and Allen Kent
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| Excerpt - page 3: "... higher power levels, while solid-state devices like microwave transistors, Gunn diodes, and IMPATT (impact ionization avalanche transit time) diodes are useful at lower-to- moderate power levels. Solid-state devices ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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Thin Film Technology Handbook
Aicha Eishabini-Riad, Fred D. Barlow, and ISHN
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| Excerpt - page 365: "... [402]. Other researchers found the maximum light output of laser diode arrays on diamond heat sinks ... use diamond heat sinks [406]. Impact ionization avalanche transit time (IMPATT) diodes operate in the 1 to 100 GHz frequency range. ..." | | See more references to Diodes, Impact Avalanche and Transit Time (IMPATT) in this book. |
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